1n4151w www.vishay.com vishay semiconductors rev. 1.4, 08-may-13 1 document number: 85721 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 small signal fast switching diode mechanical data case: sod-123 weight: approx. 10.3 mg packaging codes/options: 18/10k per 13" reel (8 mm tape), 10k/box 08/3k per 7" reel (8 mm tape), 15k/box features ? silicon epitaxial planar diode ? fast switching diode ? aec-q101 qualified ? base p/n-e3 - rohs-compliant, commercial grade ? base p/n-he3 - rohs-compliant, aec-q101 qualified ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ? ? ? ? ? note (1) valid provided that electrodes are kept at ambient temperature. parts table part ordering code internal construction type marking remarks 1n4151w 1n4151w-e3-08 or 1n4151w-e3-18 single diode a5 tape and reel 1n4151w-he3-08 or 1n4151w-he3-18 absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit reverse voltage v r 50 v repetitive peak reverse voltage v rrm 75 v average rectified current half wave rectification with resistive load (1) f ? 50 hz i f(av) 150 ma surge current t < 1 s and t j = 25 c i fsm 500 ma power dissi pation (1) p tot 410 mw thermal characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit thermal resistance junction to ambient air (1) r thja 450 k/w junction temperature t j 150 c storage temperature range t stg - 65 to + 150 c operating temperature range t op - 55 to + 150 c
1n4151w www.vishay.com vishay semiconductors rev. 1.4, 08-may-13 2 document number: 85721 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - forward current vs. forward voltage fig. 2 - dynamic forward resistance vs. forward current fig. 3 - admissible power dissipatio n vs. ambient temperature fig. 4 - relative capacitance vs. reverse voltage electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit forward voltage i f = 50 ma v f 1.0 v leakage current v r = 50 v i r 50 na v r = 20 v, t j = 150 c i r 50 a reverse breakdown voltage i r = 5 a (pulsed) v (br) 75 v diode capacitance v f = v r = 0 v c d 2pf reverse recovery time i f = 10 ma, i r = 10 ma i r = 1 ma t rr 4ns i f = 10 ma, i r = 1 ma v r = 6 v, r l = 100 ? t rr 2ns 18742 1000 100 10 1 0.1 0.01 i- for w ard c u rrent (ma) f 0 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0.2 v - for w ard v oltage ( v ) =100 c t j 25 c f 18662 1 10 100 1000 10000 r - dynamic for w ard resistance f () 110 0.1 0.01 100 i f - for w ard c u rrent (ma) =25 c t j f=1khz 200 18743 t am b - am b ient temperat u re (c) 1000 800 600 400 200 20 40 60 80 100 120 140 160180 p - admissi b le po w er dissipation (mw) tot 0 0 18664 2468 0 1.1 1.0 0.9 0.8 0.7 10 c d ( v r )/c d (0 v ) - relati v e capacitance (pf) v r - re v erse v oltage ( v ) =25 c t j f=1mhz
1n4151w www.vishay.com vishay semiconductors rev. 1.4, 08-may-13 3 document number: 85721 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - leakage current vs. junction temperature fig. 6 - admissible repetitive peak forw ard current vs. pulse duration 1 18744 10 100 1000 10000 0 20 40 60 80 100 120 140 160 180 200 i - leakage c u rrent (na) r t j - j u nction temperat u re (c) =50 v v r /t t = 1/f =t pp i frm t p t t i =0 0. 1 0. 2 0. 5 10 10 1 -1 100 10 1 -5 10 10 -4 10 -3 10 -2 18709 i - admissi b le repetiti v e frm peak for w ard c u rrent (a) t p -p u lse length (s)
1n4151w www.vishay.com vishay semiconductors rev. 1.4, 08-may-13 4 document number: 85721 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package dimensions in millimeters (inches): sod-123 0.1 (0.004) max. 2.85 (0.112) 2.55 (0.100) 3.85 (0.152) 3.55 (0.140) 1.7 (0.067) 1.40 (0.055) mo u nting pad layo u t 2.5 (0.098) 0.85 (0.033) 0.85 (0.033) 0.85 (0.033) cathode b ar 0.65 (0.026) 0.45 (0.018) 0.10 (0.004) 1 (0.039) 0.15 (0.006) 1.35 (0.053) 0.2 (0.008) 0 to 8 0.45 (0.018) 0.25 (0.010) 0.5 (0.020) ref. re v . 4 - date: 24. sep. 2009 doc u ment no.: s8- v -3910.01-001 (4) 17432
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